depletion-layer capacitance

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• depletion-layer capacitance — nuskurdintojo sluoksnio talpa statusas T sritis radioelektronika atitikmenys: angl. depletion layer capacitance vok. Sperrschichtkapazität, f rus. ёмкость обеднённого слоя, f pranc. capacité de couche de déplétion, f …   Radioelektronikos terminų žodynas

• Depletion region — In semiconductor physics, the depletion region, also called depletion layer, depletion zone, junction region or the space charge region, is an insulating region within a conductive, doped semiconductor material where the mobile charge carriers… …   Wikipedia

• capacité de couche de déplétion — nuskurdintojo sluoksnio talpa statusas T sritis radioelektronika atitikmenys: angl. depletion layer capacitance vok. Sperrschichtkapazität, f rus. ёмкость обеднённого слоя, f pranc. capacité de couche de déplétion, f …   Radioelektronikos terminų žodynas

• Double layer (interfacial) — A double layer (DL, also called an electrical double layer, EDL) is a structure that appears on the surface of an object when it is placed into a liquid. The object might be a solid particle, a gas bubble, a liquid droplet, or a porous body. The… …   Wikipedia

• semiconductor device — ▪ electronics Introduction       electronic circuit component made from a material that is neither a good conductor nor a good insulator (hence semiconductor). Such devices have found wide applications because of their compactness, reliability,… …   Universalium

• Sperrschichtkapazität — nuskurdintojo sluoksnio talpa statusas T sritis radioelektronika atitikmenys: angl. depletion layer capacitance vok. Sperrschichtkapazität, f rus. ёмкость обеднённого слоя, f pranc. capacité de couche de déplétion, f …   Radioelektronikos terminų žodynas

• nuskurdintojo sluoksnio talpa — statusas T sritis radioelektronika atitikmenys: angl. depletion layer capacitance vok. Sperrschichtkapazität, f rus. ёмкость обеднённого слоя, f pranc. capacité de couche de déplétion, f …   Radioelektronikos terminų žodynas

• ёмкость обеднённого слоя — nuskurdintojo sluoksnio talpa statusas T sritis radioelektronika atitikmenys: angl. depletion layer capacitance vok. Sperrschichtkapazität, f rus. ёмкость обеднённого слоя, f pranc. capacité de couche de déplétion, f …   Radioelektronikos terminų žodynas

• MOSFET — Two power MOSFETs in the surface mount package D2PAK. Operating as switches, each of these components can sustain a blocking voltage of 120 volts in the OFF state, and can conduct a continuous current of 30 amperes in the ON state, dissipating up …   Wikipedia

• radiation measurement — ▪ technology Introduction       technique for detecting the intensity and characteristics of ionizing radiation, such as alpha, beta, and gamma rays or neutrons, for the purpose of measurement.       The term ionizing radiation refers to those… …   Universalium

• p-n junction — A silicon p–n junction with no applied voltage. A p–n junction is formed at the boundary between a P type and N type semiconductor created in a single crystal of semiconductor by doping, for example by ion implantation, diffusion of dopants, or… …   Wikipedia